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1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
REJ03G0125-0200Z (Previous: ADE-208-153A) Rev.2.00 Oct.23.2003
Features
* Detection efficiency is very good. * Small temperature coefficient. * High reliability with glass seal..
Ordering Information
Type No. 1SS106 Cathode White 2nd band White Mark H Package Code DO-35
Pin Arrangement
H
1 2nd band Cathode band
2
1. Cathode 2. Anode
Rev.2.00, Oct.23.2003, page 1 of 4
1SS106
Absolute Maximum Ratings
(Ta = 25C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 10 30 125 -55 to +125 Unit V mA C C
Electrical Characteristics
(Ta = 25C)
Item Forward current Reverse current Capacitance ESD-Capability Note:
*1
Symbol IF IR C --
Min 4.5 -- -- 100
Typ -- -- -- --
Max -- 70 1.5 --
Unit mA A pF V
Test Condition VF = 1 V VR = 6 V VR = 1 V, f = 1 MHz C = 200 pF, Both forward and reverse direction 1 pulse.
1. Failure criterion; IR 140 A at VR = 6 V
Rev.2.00, Oct.23.2003, page 2 of 4
1SS106
Main Characteristics
10-1 10-2
10-3
Reverse current IR (A)
Forward current IF (A)
10-2
10-3
10-4
10-4
10-5
10-5
0
0.4
0.8
1.2
1.6
2.0
10-6
0
2
4
6
8
10
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage
Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage
f = 1MHz
10
Capacitance C (pF)
1.0
0.1 0.1
1.0 Reverse voltage VR (V)
10
Fig.2 Capacitance vs. Reverse voltage
Rev.2.00, Oct.23.2003, page 3 of 4
1SS106
Package Dimensions
As of January, 2003
Unit: mm
26.0 Min
4.2 Max
26.0 Min
0.5
2.0
Package Code JEDEC JEITA Mass (reference value)
DO-35 Conforms Conforms 0.13 g
Rev.2.00, Oct.23.2003, page 4 of 4
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